Thin stacked interposer package

ABSTRACT

The present invention comprises a semiconductor package comprising a bottom semiconductor package substrate which is populated with one or more electronic components. The electronic component(s) of the bottom substrate are covered or encapsulated with a suitable mold compound which hardens into a package body of the semiconductor package. The package body is provided with one or more vias through the completion of laser drilling process, such via(s) providing access to one or more corresponding conductive contacts of the bottom substrate. These vias are either lined or partially filled with a conductive metal material. Subsequently, a top semiconductor package substrate (which may optionally be populated with one or more electronic components) is mounted to the package body and electrically connected to the conductive metal within the via(s) of the package body.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 11/865,617 entitled THIN STACKED INTERPOSER PACKAGE filed Oct.1, 2007 now U.S. Pat. No. 7,777,351.

STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT

Not Applicable

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to integrated circuit chippackage technology and, more particularly, to a semiconductor packagewhich is configured in a manner wherein two complimentary laminatesubstrate elements (i.e., a bottom element and a top element) areelectrically connected to each other subsequent to one or both of thesubstrate elements being populated with various electronic components.Further in accordance with the present invention, there is provided astacked wafer level chip scale package (WLCSP).

2. Description of the Related Art

Semiconductor dies are conventionally enclosed in plastic packages thatprovide protection from hostile environments and enable electricalinterconnection between the semiconductor die and an underlyingsubstrate such as a printed circuit board (PCB) or motherboard. Theelements of such a package include a metal leadframe, an integratedcircuit or semiconductor die, bonding material to attach thesemiconductor die to the leadframe, bond wires which electricallyconnect pads on the semiconductor die to individual leads of theleadframe, and a hard plastic encapsulant material which covers theother components and forms the exterior of the semiconductor packagecommonly referred to as the package body.

The leadframe is the central supporting structure of such a package, andis typically fabricated by chemically etching or mechanically stamping ametal strip. A portion of the leadframe is internal to the package,i.e., completely surrounded by the plastic encapsulant or package body.Portions of the leads of the leadframe extend externally from thepackage body or are partially exposed therein for use in electricallyconnecting the package to another component. In certain semiconductorpackages, a portion of the die attach pad or die pad of the leadframealso remains exposed within the package body. In other semiconductorpackages, the metal leadframe is substituted with a laminate substrateto which the semiconductor die is mounted and which includes pads orterminals for mimicking the functionality of the leads and establishingelectrical communication with another device.

Once the semiconductor dies have been produced and encapsulated in thesemiconductor packages described above, they may be used in a widevariety of electronic devices. The variety of electronic devicesutilizing semiconductor packages has grown dramatically in recent years.These devices include cellular phones, portable computers, etc. Each ofthese devices typically includes a printed circuit board on which asignificant number of such semiconductor packages are secured to providemultiple electronic functions. These electronic devices are typicallymanufactured in reduced sizes and at reduced costs, which results inincreased consumer demand. Accordingly, not only are semiconductor dieshighly integrated, but also semiconductor packages are highlyminiaturized with an increased level of package mounting density.

Even though semiconductor packages have been miniaturized, space on aprinted circuit board remains limited and precious. Thus, there is aneed to find a semiconductor package design to maximize the number ofsemiconductor packages that may be integrated into an electronic device,yet minimize the space needed to accommodate these semiconductorpackages. One method to minimize space needed to accommodate thesemiconductor packages is to stack the semiconductor packages on top ofeach other, or to stack individual semiconductor devices or otherdevices within the package body of the semiconductor package. However,existing solutions for package stacking such as straddle mount laminateBGA or stacked die TSOP often do not meet form factor requirements.Therefore, a new solution is needed. The present invention is anextension of the stacking solution for space efficiency in that it isdirected to, among other things, a semiconductor package which isconfigured in a manner wherein two complimentary laminate substrateelements (i.e., a bottom element and a top element) are electricallyconnected to each other subsequent to one or both of the substrateelements being populated with various electronic components. In thisregard, the present invention provides a two-sided package architecturewhich allows topside routing (also known as a “lands-over-top” feature)while also enabling the embedding of multiple components, including butnot limited to active, passive and prepackaged components. These, aswell as other features and attributes of the present invention will bediscussed in more detail below brief summary

BRIEF SUMMARY OF THE INVENTION

In accordance with one embodiment of the present invention, there isprovided a semiconductor package comprising a bottom semiconductorpackage substrate which is populated with one or more electroniccomponents. The electronic component(s) of the bottom substrate arecovered or encapsulated with a suitable mold compound which hardens intoa package body of the semiconductor package. The package body isprovided with one or more vias through the completion of lasering orsimilar drilling process, such via(s) providing access to one or morecorresponding conductive contacts of the bottom substrate. These viasare either lined or at least partially filled with a conductive metalmaterial. Subsequently, a top semiconductor package substrate (aninterposer) which may optionally be populated with one or moreelectronic components is mounted to the package body and electricallyconnected to the conductive metal material within the via(s) of thepackage body.

In accordance with another embodiment of the present invention, there isprovided a semiconductor package comprising a primary semiconductor dieand a secondary semiconductor die which is electrically connected to theprimary semiconductor die. The secondary semiconductor die is covered orencapsulated with a suitable mold compound which hardens into a packagebody of the semiconductor package. The package body is provided with oneor more vias through the completion of a lasering or similar drillingprocess, such via(s) providing access to one or more correspondingconductive pads or terminals of the primary semiconductor die other thanthose to which the secondary semiconductor die is electricallyconnected. These vias are filled with a conductive metal material.

The present invention is best understood by reference to the followingdetailed description when read in conjunction with the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

These, as well as other features of the present invention, will becomemore apparent upon reference to the drawings wherein:

FIG. 1 is a cross-sectional view of the semiconductor packageconstructed in accordance with a first embodiment of the presentinvention;

FIGS. 2A-2C illustrate an exemplary sequence of steps which may be usedto facilitate the fabrication of the bottom substrate assembly of thesemiconductor package shown in FIG. 1;

FIGS. 3A-3D illustrate an exemplary sequence of steps which may be usedto fabricate the semiconductor package shown in FIG. 1;

FIG. 4 is a cross-sectional view of a semiconductor package constructedin accordance with a second embodiment of the present invention;

FIG. 5 is a cross-sectional view of a semiconductor package constructedin accordance with a third embodiment of the present invention;

FIG. 6 is an exploded, partial cross-sectional view of the semiconductorpackage shown in FIG. 5;

FIG. 7 is an exploded, partial cross-sectional view of a semiconductorpackage constructed in accordance with a fourth embodiment of thepresent invention;

FIG. 8 is an exploded, partial cross-sectional view of a semiconductorpackage constructed in accordance with a fifth embodiment of the presentinvention;

FIG. 9 is an exploded, partial cross-sectional view of a semiconductorpackage constructed in accordance with a sixth embodiment of the presentinvention;

FIG. 10 is an exploded, partial cross-sectional view of a semiconductorpackage constructed in accordance with a seventh embodiment of thepresent invention;

FIG. 11 is a cross-sectional view of a semiconductor package constructedin accordance with an eighth embodiment of the present invention;

FIG. 12 is a cross-sectional view of a semiconductor package constructedin accordance with a ninth embodiment of the present invention;

FIG. 13 is a cross-sectional view of a semiconductor package constructedin accordance with a tenth embodiment of the present invention;

FIG. 14 is a cross-sectional view of a semiconductor package constructedin accordance with an eleventh embodiment of the present invention;

FIG. 15 is a cross-sectional view of a semiconductor package constructedin accordance with a twelfth embodiment of the present invention; and

FIG. 16 is a cross-sectional view of a semiconductor package constructedin accordance with a thirteenth embodiment of the present invention.

Common reference numerals are used throughout the drawings and detaileddescription to indicate like elements.

DETAILED DESCRIPTION OF THE INVENTION

Referring now to the drawings wherein the showings are for purposes ofillustrating various embodiments of the present invention only, and notfor purposes of limiting the same, FIG. 1 depicts a semiconductorpackage 10 constructed in accordance with a first embodiment of thepresent invention. The semiconductor package 10 comprises a bottomsubstrate assembly 11, which itself comprises a laminate bottomsubstrate 12 which has a generally quadrangular configuration definingfour (4) peripheral edge segments. In addition, the bottom substrate 12defines a generally planar top surface 14 and an opposed, generallyplanar bottom surface 16. Disposed on the top surface 14 is a pluralityof top contacts 18 of the bottom substrate 12. In the bottom substrate12, the top contacts 18 are typically disposed in relative closeproximity to the peripheral edge segments defined by the bottomsubstrate 12. Formed on the bottom surface 16 of the bottom substrate 12is a plurality of bottom contacts 20. Though not shown in FIG. 1, thetop and bottom contacts 18, 20 are electrically connected to each otherin a prescribed pattern or arrangement by conductive vias which extendthrough the bottom substrate 12.

Attached to a central area of the top surface 14 of the bottom substrate12 is at least one electronic component of the semiconductor package 10,and more particularly a die stack 22. The die stack 22 comprises aplurality of individual semiconductor dies 24 which are arranged in astacked configuration. In this regard, the uppermost semiconductor die24 in the die stack 22 is secured to the semiconductor die 24 below itby a layer 26 of suitable adhesive. Similarly, the attachment of thelowermost semiconductor die 24 in the die stack 22 to the top surface 14of the bottom substrate 12 is facilitated by an adhesive layer 26. Asshown in FIG. 1, two (2) semiconductor dies 24 are depicted as beingincluded in the die stack 22. However, those of ordinary skill in theart will recognize that the die stack 22 may be assembled to includegreater than the two semiconductor dies 24 depicted in FIG. 1, or may besubstituted with a single semiconductor die 24 as shown in theembodiment of FIG. 4 which will be discussed in more detail below. Inthe semiconductor package 10, the pads or terminals of each of thesemiconductor dies 24 of the die stack 22 are electrically connected toat least some of the top contacts 18 through the use of conductive wires28. More particularly, in the semiconductor package 10, it iscontemplated that the conductive wires 28 may extend from thesemiconductor dies 24 to conductive pads, traces or the like which aredisposed on the top surface 14 and in turn electrically connected to thetop contacts 18 in a prescribed pattern or arrangement. It is furthercontemplated that the conductive wires 28 can be attached directly tothe top contacts 18 in a prescribed pattern or arrangement. Theconductive wires 28 may be fabricated from aluminum, copper, gold,silver or a functional equivalent. Though not shown in FIG. 1, it iscontemplated that the lowermost semiconductor die 24 in the die stack 22may be electrically connected to such conductive traces on the topsurface 14 of the underlying bottom substrate 12 through the use of aflip-chip type connection as an alternative to the use of the wires 28as shown in the embodiments in FIGS. 6-9 which will also be discussed inmore detail below.

In the semiconductor package 10, the die stack 22, wires 28 and portionsof the top surface 14 of the bottom substrate 12 are encapsulated orcovered by an encapsulant material which, upon hardening, forms apackage body 30 of the semiconductor package 10. The fully formedpackage body 30 directly contacts the top surface 14 of the bottomsubstrate 12, and extends in a substantially flush relationship to theperipheral edge segments thereof. In addition, the package body 30defines multiple, generally planar side surfaces 32, and a generallyplanar top surface 34. Formed within the package body 30 subsequent tothe fabrication thereof is a plurality of vias 36, each of which has agenerally frusto-conical configuration. Each of the vias 36 extends fromthe top surface 34 of the package body 30 to a respective one of the topcontacts 18 disposed on the top surface 14 of the bottom substrate 12.Thus, the number of vias 36 formed in the package body 30 preferablyconforms to the number of top contacts 18 disposed on the top surface 14of the bottom substrate 12. In the semiconductor package 10, each of thevias 36 is partially filled with a conductive metal material such assolder 38. Solder 38 is preferably filled into each of the vias 36 to adepth wherein the solder 38 within each via 36 terminates just below thetop surface 34 of the package body 30. However, it is also contemplatedthat the solder 38 could extend to just above the top surface 34 of thepackage body 30 if the bottom substrate assembly 11 is used inconjunction with a land grid array (LGA) in lieu of the top substrate 40which is described below. As will be recognized by those of ordinaryskill in the art, the solder 38 filled into each via 36 is in direct,conductive communication with the top contact 18 disposed at the bottomof such via 36.

The semiconductor package 10 of the first embodiment further comprises alaminate top substrate 40 which is mechanically and electricallyconnected to the bottom substrate assembly 11 in a manner which will bedescribed in more detail below. The top substrate 40 also has agenerally quadrangular configuration defining four (4) peripheral edgesegments. In addition, the top substrate 40 defines a generally planartop surface 42 and an opposed, generally planar bottom surface 44.Disposed in the approximate center of the top surface 42 of the topsubstrate 40 is a plurality of top contacts 46 of the top substrate 40.Those of ordinary skill in the art will recognize that the top contacts46 may be provided anywhere on the top surface 42, the depictedplacement in the central region thereof constituting one exemplaryplacement. Additionally, formed on the bottom surface 44 of the topsubstrate 40 is a plurality of bottom contacts 48 thereof. In the topsubstrate 40, the bottom contacts 48 are typically disposed in relativeclose proximity to the peripheral edge segments defined by the topsubstrate 40. Though not shown, the top and bottom contacts 46, 48 areelectrically connected to each other by conductive vias which extendthrough the top substrate 40. Those of ordinary skill in the art willrecognize that each top contact 46 may be electrically connected to oneor more bottom contacts 48 in any pattern or arrangement through the useof such conductive vias. Formed on each bottom contact 48 of the topsubstrate 40 is a solder ball 50 which is used to facilitate theelectrical connection of the top substrate 40 to the bottom substrateassembly as will be described below. Though the top substrate 40 isshown as being approximately the same size as the bottom substrateassembly 11, those of ordinary skill in the art will recognize that thetop substrate 40 can also be larger or smaller than the bottom substrateassembly 11. Additionally, as indicated above, the top substrate 40could be substituted with an LGA substrate, or could include a stud bumpmade from aluminum or copper wire.

In the semiconductor package 10, each solder ball 50 attached to arespective bottom contact 48 of the top substrate 40 is advanced into arespective one of the vias 36 formed in the package body 30 of thebottom substrate assembly 11. As will be recognized by those of ordinaryskill in the art, such advancement is limited by the abutment of eachsolder ball 50 against the solder 38 filled into the corresponding via36. When such abutment occurs, a slight gap will typically be definedbetween the top surface 34 of the package body 30 and the bottom surface44 of the top substrate 40. The subsequent completion of a solder reflowprocess effectively mechanically and electrically connects the solderballs 50 of the top substrate 40 to the solder 38 in respective ones ofthe vias 36, thereby electrically connecting the bottom contacts 48 ofthe top substrate 40 to respective ones of the top contacts 18 of thebottom substrate 12. The reflow of the solder balls 50 and solder 38will typically cause the bottom surface 44 of the top substrate 40 toeither contact or be disposed in extremely close proximity to the topsurface 34 of the package body 30. As further seen in FIG. 1, it iscontemplated that an adhesive layer 52 may be interposed between the topsurface 34 of the package body 30 and the bottom surface 44 of the topsubstrate 40 to strengthen the mechanical interconnection therebetween.

In the semiconductor package 10, the bottom substrate assembly 11 andthe top substrate 40 are preferably sized and configured relative toeach other such that when the top substrate 40 is electrically andmechanically connected to the bottom substrate assembly 11 in theabove-described manner, the peripheral edge segments of the topsubstrate 40 extend in generally co-planar relation to respective onesof the peripheral edge segments of the bottom substrate 12. Similarly,the peripheral edge segments of the bottom and top substrates 12, 40extend in generally flush, co-planar relation to respective ones of theside surfaces 32 of the package body 30. Further, when the top substrate40 is electrically and mechanically connected to the bottom substrateassembly 11, the die stack 22 as well as the conductive wires 28 arealso effectively positioned between the bottom and top substrates 12,40, and more particularly the top surface 14 of the bottom substrate 12and the bottom surface 44 of the top substrate 40. In the semiconductorpackage 10, the top contacts 46 of the top substrate 40 provide top siderouting also know as a “lands-over-top” feature. Additionally, it iscontemplated that each of the bottom contacts 20 of the bottom substrate12 will include a solder ball 54 formed thereon to facilitate theelectrical and mechanical connection of the semiconductor package 10 toan underlying substrate such as a printed circuit board. Additionally,it is contemplated that the bottom substrate 12 could be substitutedwith a land grid array (LGA) substrate.

FIGS. 2A-2C illustrate an exemplary sequence of steps which may beutilized to facilitate the fabrication of the bottom substrate assembly11 of the semiconductor package 10. In the initial step of thefabrication process shown in FIG. 2A, the die stack 22 is mounted andelectrically connected to the bottom substrate 12 in the above-describedmanner, with the package body 30 thereafter being formed over the diestack 22, wires 28 and top surface 14 of the bottom substrate 12. Alaser drilling process is then completed in the manner shown in FIG. 2Bto facilitate the formation of the vias 36 in the package body 30 in theabove-described manner. In this regard, as previously explained, thevias 36 are oriented so as to extend form the top surface 34 of thepackage body 30 to respective ones of the top contacts 18 of the bottomsubstrate 12. Subsequent to the formation of the vias 36, each such via36 is partially filled with the solder 38 as shown in FIG. 2C and in themanner also described above. The partial filling of the vias 36 with thesolder 38 completes the fabrication of the bottom substrate assembly 11.As an alternative to the use of the above-described lasering process tofacilitate the formation of the vias 36, it is contemplated that suchvias 36 may be created by forming the package body 30 through the use ofa special mold tool. More particularly, such mold tool is outfitted witha plurality of pins which engage respective ones of the top contacts 18and are sized and oriented to define respective ones of the vias 36.Alternatively, the pins of the mold tool may be sized and configured soas not to engage the top contacts 18 and thus only partially define thevias 36. In this case, a lasering process is subsequently conducted toremove portions of the package body 30 as needed to complete theextension of each of the partially formed vias 36 to respective ones ofthe top contacts 18.

FIGS. 3A-3D illustrate an exemplary sequence of steps which may be usedto facilitate the complete fabrication of the semiconductor package 10shown in FIG. 1. In the initial step of the fabrication process shown inFIG. 3A, the bottom substrate assembly 11 is provided, such bottomsubstrate assembly 11 being fabricated in the manner described in FIGS.2A-2C above. As shown in FIG. 3B, the adhesive layer 52 (e.g. an epoxy)is then dispensed upon a central portion of the top surface 34 of thepackage body 30 of the bottom substrate assembly 11. Thereafter, asshown in FIG. 3C, the solder balls 50 formed on the bottom contacts 48of the top substrate 40 are advanced into respective ones of the vias 36in the above-described manner so as to abut the solder 38 in such vias.As indicated above, the abutment of the solder balls 50 against thesolder 38 in respective ones of the vias 36 typically results in a gapor space being defined between the bottom surface 44 of the topsubstrate 40 and the top surface 34 of the package body 30. As shown inFIG. 3D, the subsequent completion of a solder reflow processeffectively mechanically and electrically connects the solder balls 50to the solder 38 in respective ones of the vias 36, thus placing each ofthe bottom contacts 48 of the top substrate 40 into electricalcommunication with respective ones of the top contacts 18 of the bottomsubstrate assembly 11. Though, for purposes of clarity, FIGS. 1 and 3Ddepict the solder balls 50 and solder 38 as separate elements, those ofordinary skill in the art will recognize that the completion of theaforementioned reflow process effectively combines the solder balls 50and solder 38 into a continuous column. The same holds true for thedepictions in FIGS. 4 and 5 described below.

Referring now to FIG. 4, there shown a semiconductor package 10 aconstructed in accordance with a second embodiment of the presentinvention. The semiconductor package 10 a is substantially similar inconstruction to the semiconductor package 10 described above, with thesole distinction between the semiconductor packages 10, 10 a lying inthe semiconductor package 10 a including only a single semiconductor die24 a mounted and electrically connected to the bottom substrate 12 a ofthe bottom substrate assembly 11 a. The inclusion of the singlesemiconductor die 24 a in the semiconductor package 10 a is in contrastto the die stack 22 having the stacked semiconductor dies 24 which isincluded in the semiconductor package 10.

Referring now to FIGS. 5 and 6, there shown a semiconductor package 10 bconstructed in accordance with a third embodiment of the presentinvention. The semiconductor package 10 b is substantially similar tothe semiconductor package 10 a shown in FIG. 4, except that the singlesemiconductor die 24 b of the semiconductor package 10 b is electricallyconnected to the bottom substrate 12 b through the use of a flip-chiptype connection, as opposed to the use of the conductive wires 28 a usedin conjunction with the semiconductor die 24 a in the semiconductorpackage 10 a. More particularly, in the semiconductor package 10 b,conductive posts 56 b which may be made of copper or a similar, suitableconductive material are used to electrically connect pads or terminalsof the semiconductor die 24 b to corresponding pads or traces of thebottom substrate 12 b which are in turn electrically connected to thetop contacts 18 b thereof in a prescribed pattern or arrangement. Thoseof ordinary skill in the art will recognize that solder balls may alsobe used as an alternative to the conductive posts 56 b. In FIG. 6, thesolder 38 b filled into each of the vias 36 b in the package body 30 bof the bottom substrate assembly 11 b is clearly depicted, as is thedirect engagement between the solder 38 b in each via 36 b and arespective one of the top contacts 18 b included on the top surface 14 bof the substrate 12 b. Though not shown in FIGS. 5 and 6, it iscontemplated that the top surface of the semiconductor die 24 b could beexposed in the top surface 34 b of the package body 30 b rather thanbeing covered by the package body 30 b to reduce the overall thicknessof the bottom substrate assembly 11 b.

Referring now to FIG. 7, there shown a semiconductor package 10 cconstructed in accordance with a fourth embodiment of the presentinvention. The semiconductor package 10 c is similar to thesemiconductor package 10 b described above in relation to FIGS. 5 and 6,with one distinction between the semiconductor packages 10 b, 10 c lyingin the substitution of the conductive posts 56 b of the semiconductorpackage 10 b with the solder balls 58 c included in the semiconductorpackage 10 c. In this regard, the solder balls 58 c are used tofacilitate the electrical connection of the sole semiconductor die 24 cincluded in the semiconductor package 10 c to the bottom substrate 12 cthereof. More particularly, in the semiconductor package 10 c, thesolder balls 58 c are used to electrically connect pads or terminals ofthe semiconductor die 24 b to corresponding pads or traces of the bottomsubstrate 12 c which are in turn electrically connected to the topcontacts 18 c thereof in a prescribed pattern or arrangement.

A further distinction between the semiconductor packages 10 b, 10 c liesin the formation of solder balls 60 c upon each of the top contacts 18 cdisposed on the top surface 14 c of the substrate 12 c. As is seen inFIG. 7, due to the formation of the solder balls 60 c upon respectiveones of the top contacts 18 c, the vias 36 c formed in the package body30 c of the bottom substrate assembly 11 c extend to respective ones ofsuch solder balls 60 c, as opposed to extending to respective ones ofthe top contacts 18 c. Along these lines, in contrast to thesemiconductor package 10 b wherein solder 38 b is partially filled intoeach of the vias 36 b, no solder is filled into each of the vias 36 c inthe semiconductor package 10 c. In this regard, subsequent to theadvancement of the solder balls 50 c of the top substrate 40 c intorespective ones of the vias 36 c, the completion of a solder reflowprocess effectively fuses the solder balls 50 c to respective ones ofthe solder balls 60 c as effectively places the bottom contacts 48 c ofthe top substrate 40 c into electrical communication with respectiveones of the top contacts 18 c of the bottom substrate 12 c. As isfurther shown in FIG. 7, when the solder balls 58 c are used tofacilitate the electrical connection of the semiconductor die 24 c tothe bottom substrate 12 c, an underfill material 62 c is typicallyincluded in the bottom substrate assembly 11 c, such underfill material62 c flowing about the solder balls 58 c between the semiconductor die24 c and the top surface 14 c of the bottom substrate 12 c.

Referring now to FIG. 8, there shown a semiconductor package 10 d whichis constructed in accordance with a fifth embodiment of the presentinvention. The semiconductor package 10 d is substantially similar tothe semiconductor package 10 c described above in relation to FIG. 7,with the sole distinction lying in the substitution of the solder balls60 c of the semiconductor package 10 c with conductive posts 64 d in thesemiconductor package 10 d. In this regard, in the semiconductor package10 d, the conductive posts 64 d are formed on respective ones of the topcontacts 18 d disposed on the top surface 14 d of the substrate 12 d.Additionally, the vias 36 d formed in the package body 30 d extend fromthe top surface 34 d to respective ones of the conductive posts 64 d.The conductive posts 64 d of the semiconductor package 10 d are eachpreferably fabricated from a conductive metal material, such as copper.The conductive posts 64 d may be soldered to respective ones of the topcontacts 18 d.

Referring now to FIG. 9, there shown a semiconductor package 10 e whichis constructed in accordance with a sixth embodiment of the presentinvention. The semiconductor package 10 e is similar to theabove-described semiconductor packages 10 c, 10 d shown in FIGS. 7 and8, respectively, with the primary distinction lying in the eliminationof the above-described solder balls 60 c and conductive posts 64 d inthe semiconductor package 10 e. More particularly, in the semiconductorpackage 10 e, the vias 36 e extend all the way to respective ones of thetop contacts 18 e disposed on the top surface 14 e of the substrate 12e. However, rather than each of the vias 36 e being partially filledwith solder similar to the partial filling of the vias 36 b with solder38 b in the semiconductor package 10 b shown and described above inrelation to FIGS. 5 and 6, the sidewall of each of the vias 36 e in thesemiconductor package 10 e is only plated with a conductive metalmaterial. As further seen in FIG. 9, the conductive plating 38 e of eachvia 36 e extends from the top surface 34 e of the package body 30 e andcovers that portion of the corresponding top contact 18 e which isexposed at the bottom of the via 36 e. As will be recognized by those ofordinary skill in the art, when the solder balls 50 e of the topsubstrate 40 e of the semiconductor package 10 e are advanced intorespective ones of the vias 36 e to facilitate the mechanical andelectrical connection of the top substrate 40 e to the bottom substrateassembly 11 e, the subsequent completion of a solder reflow processeffectively fuses the solder balls 50 e to the conductive plating 38 eof respective ones of the vias 36 e, thus in turn electricallyconnecting the bottom contacts 48 e of the top substrate 40 e torespective ones of the top contacts 18 e of the bottom substrate 12 e.

Referring now to FIG. 10, there shown a semiconductor package 10 fconstructed in accordance with a seventh embodiment of the presentinvention. The semiconductor package 10 f is similar in construction tothe semiconductor package 10 b described above in relation to FIG. 6,except that the top substrate 40 b of the semiconductor package 10 b issubstituted with a top substrate assembly 66 f in the semiconductorpackage 10 f. The top substrate assembly 66 f is mechanically andelectrically connected to the bottom substrate assembly 11 f, which isitself identically configured to the bottom substrate assembly 11 b ofthe semiconductor package 10 b. The top substrate assembly 66 fcomprises a top substrate 40 f which is substantially similar to the topsubstrate 40 of the semiconductor package 10, except that one or moreelectronic components such as semiconductor dies, passive devices andthe like are mounted to the top surface of the top substrate 40 f andelectrically connected to the bottom contacts 48 f disposed on thebottom surface 44 f of the top substrate 40 f in a prescribed pattern orarrangement. The electronic component(s) mounted to the top surface ofthe top substrate 40 f are covered or encapsulated by a package body 68f of the top substrate assembly 66 f. Thus, the top substrate assembly66 f has the general structural and functional attributes of aconventional BGA (ball grid array) semiconductor package. Those ofordinary skill in the art will recognize that a ball grid arraysemiconductor package like the top substrate assembly 66 f included inthe semiconductor package 10 f may be substituted for the top substrates40, 40 a, 40 b, 40 c, 40 d and 40 e described in relation to each of thesemiconductor packages 10, 10 a, 10 b, 10 c, 10 d, 10 e.

Referring now to FIG. 11, there shown a semiconductor package 100constructed in accordance with an eighth embodiment of the presentinvention. The semiconductor package 100 comprises a primarysemiconductor die 102 which has a generally quadrangular configuration.In this regard, the primary semiconductor die 102 defines a generallyplanar top surface 104, an opposed generally planar bottom surface 106,and a plurality of generally planar side surfaces 108 which extendgenerally perpendicularly between the top and bottom surfaces 104, 106.Disposed on the bottom surface 106 of the primary semiconductor die 102is a plurality of conductive pads or terminals.

In addition to the primary semiconductor die 102, the semiconductorpackage 100 comprises a secondary semiconductor die 110 which also has agenerally quadrangular configuration. Conductive pads or terminals ofthe secondary semiconductor die 110 are electrically connected torespective ones of the pads or terminals of the primary semiconductordie 102 through the use of solder balls 112, as shown FIG. 11.

In the semiconductor package 100, subsequent to the electricalconnection of the secondary semiconductor die 110 to the primarysemiconductor die 102 through the use of the solder balls 112, thesecondary semiconductor die 110, solder balls 112, and bottom surface106 of the primary semiconductor die 102 are encapsulated or covered byan encapsulant material or molding compound which, upon hardening, formsa package body 114 of the semiconductor package 100. The fully formedpackage body 114 directly contacts the bottom surface 106 of the primarysemiconductor die 102 and defines multiple, generally planar sidesurfaces 116 which extend in generally flush, co-planar relation torespective ones of the side surfaces 108 of the primary semiconductordie 102. In addition, the package body 114 defines a generally planarbottom surface 118.

In the semiconductor package 100, vias 120 are formed in the packagebody 114, with each of the vias 120 extending from the bottom surface118 to a respective one of the conductive pads or terminals disposed onthe bottom surface 106 of the primary semiconductor die 102. Like thevias 36 described above in relation to the semiconductor package 10,each of the vias 120 preferably has a generally frusto-conicalconfiguration, and is formed by the completion of a laser drilling orsimilar process. In the semiconductor package 100, each of the vias 120is completely filled with a solder ball 122. More particularly, eachsolder ball 122 directly contacts a respective one of the pads orterminals of the primary semiconductor die 102, and includes a portionwhich protrudes outwardly beyond the bottom surface 118 of the packagebody 114 as shown in FIG. 11. As will be recognized by those of ordinaryskill in the art, the protruding portions of the solder balls 122 areused to facilitate the electrical connection of the semiconductorpackage 100 to an underlying substrate such as a printed circuit board.

Referring now to FIG. 12, there shown a semiconductor package 100 aconstructed in accordance with a ninth embodiment of the presentinvention. The semiconductor package 100 a is substantially similar tothe semiconductor package 100 described above in relation to FIG. 11,with the primary distinction lying in the package body 114 a of thesemiconductor package 100 a being formed to be of a reduced thickness incomparison to the package body 114. As a result of the formation of thepackage body 114 a with a reduced thickness in comparison to the packagebody 114, that surface of the secondary semiconductor die 110 a of thesemiconductor package 100 a opposite that having the solder balls 112 aapplied thereto and disposed closest to the bottom surface 106 a of theprimary semiconductor die 102 a is exposed in and substantially flushwith the bottom surface 118 a of the package body 114 a. As is furtherseen in FIG. 12, the reduced thickness of the package body 114 a alsocauses the solder balls 122 a of the semiconductor package 100 a to besmaller than the solder balls 122 included in the semiconductor package100.

Referring now to FIG. 13, there shown a semiconductor package 100 bconstructed in accordance with a tenth embodiment of the presentinvention. The semiconductor package 100 b is also similar inconstruction to the semiconductor package 100 shown and described abovein relation to FIG. 11, with the primary distinction lying in thesecondary semiconductor die 110 b of the semiconductor package 100 bbeing electrically connected to corresponding pads or terminals on thebottom surface 106 b of the primary semiconductor die 102 b through theuse of conductive wires 124 b as opposed to the use of the solder balls112 described above in relation to the semiconductor package 100. Eachof the conductive wires 124 b extends from a pad or terminal of thesecondary semiconductor die 110 b to a corresponding pad or terminal onthe bottom surface 106 b of the primary semiconductor die 102 b.Additionally, in the semiconductor package 100 b, that surface of thesecondary semiconductor die 110 b opposite that to which the conductivewire 124 b extend is itself secured to a central portion of the bottomsurface 106 b of the primary semiconductor die 102 b though the use ofan adhesive layer 126 b. In the semiconductor package 100 b, thesecondary semiconductor die 110 b, conductive wires 124 b, and adhesivelayer 126 b are each covered by the package body 114 b thereof.

Referring now to FIG. 14, there shown a semiconductor package 100 cconstructed in accordance with an eleventh embodiment of the presentinvention. The semiconductor package 100 c is similar in structure tothe semiconductor package 100 shown and described above in relation toFIG. 11. However, in the semiconductor package 100 c, each of the vias120 c is not filled with a solder ball such as the solder ball 122described in relation to the semiconductor package 100. Rather, each via120 c in the semiconductor package 100 c is filled or lined with aconductive metal material (e.g., copper). Also included in thesemiconductor package 100 c is a plurality of conductive traces 128 cwhich are embedded in the bottom surface 118 c of the package body 114c. Each of the traces 128 c, which may also be fabricated from copper,is integrally connected to the copper material filled into a respectiveone of the vias 120 c. In fabricating the semiconductor package 100 c, alaser is preferably used to ablate trenches into the bottom surface 118c of the package body 114 c, such trenches being sized and configured toaccommodate respective ones of the traces 128 c. Additionally, formed oneach of the traces 128 c is a solder ball 130 c which is to facilitatethe electrical connection of the semiconductor package 100 c to anunderlying substrate such as a printed circuit board. In thesemiconductor package 100 c, the exposed portions of the bottom surface118 c of the package body 114 c and traces 128 c, as well as portions ofeach of the solder balls 130 c, may be covered by a layer 132 c of asolder mask or polymer flux.

Referring now to FIG. 15, there shown a semiconductor package 100 dconstructed in accordance with a twelfth embodiment of the presentinvention. The semiconductor package 100 d is substantially similar tothe semiconductor package 100 c shown and described above in relation toFIG. 14. In this regard, the primary distinction between thesemiconductor packages 100 c, 100 d lies in the traces 128 d of thesemiconductor package 100 d being embedded in a build-up layer 134 d ofthe semiconductor package 100 d, as opposed to being embedded in thebottom surface 118 d of the package body 114 d thereof. In this regard,the build-up layer 134 d is applied directly to the bottom surface 118 dof the package body 114 d. The build-up layer 134 d and exposed portionsof the conductive traces 128 d are each covered by a solder mask layer135 d.

Referring now to FIG. 16, there shown a semiconductor package 100 econstructed in accordance with a thirteenth embodiment of the presentinvention. The semiconductor package 100 e is substantially similar instructure to the semiconductor package 100 d shown and described abovein relation to FIG. 15. In this regard, the primary distinction betweenthe semiconductor packages 100 d, 100 e lies in the substitution of thebuild-up layer 134 d of the semiconductor package 100 d with adielectric layer 136 e in the semiconductor package 100 e. Thedielectric layer 136 e is applied to the bottom surface 118 e of thepackage body 114 e in the semiconductor package 100 e. The conductivetraces 128 e of the semiconductor package 100 e are not embedded in thedielectric layer 136 e, but rather are applied to the outer surfacethereof as shown in FIG. 16. Though not shown in FIG. 16, it iscontemplated that a solder mask layer may be applied over the conductivetraces 128 e and dielectric layer 136 e, similar to the solder masklayer 135 d shown in FIG. 15.

This disclosure provides exemplary embodiments of the present invention.The scope of the present invention is not limited by these exemplaryembodiments. Numerous variations, whether explicitly provided for by thespecification or implied by the specification, such as variations instructure, dimension, type of material and manufacturing process may beimplemented by one of skill in the art in view of this disclosure.

1. A semiconductor package comprising: a bottom substrate including: aplurality of first contacts, at least some of the first contacts of thebottom substrate each having a solder ball which is of a first maximumdiameter disposed thereon; and a plurality of second contacts, each ofthe second contacts of the bottom substrate being electrically connectedto at least one of the first contacts thereof; at least one electroniccomponent attached to the bottom substrate and electrically connected toat least one the first contacts; a package body at least partiallyencapsulating the bottom substrate and the electronic component, thepackage body including a plurality of vias disposed therein andextending to respective ones of the solder balls of the bottomsubstrate; and a top substrate including: a plurality of first contacts;and a plurality of second contacts, each of the first contacts of thetop substrate being electrically connected to at least one of the secondcontacts thereof; at least some of the second contacts of the topsubstrate each having a solder ball which is of a second maximumdiameter substantially equal to the first maximum diameter disposedthereon, the solder balls of the top substrate being mechanically andelectrically connected to respective ones of the solder balls of thebottom substrate, with the vias being sized and configured toaccommodate the advancement of the solder balls on the top substratetherein to a depth wherein the top substrate is disposed in extremelyclose proximity to the package body.
 2. The semiconductor package ofclaim 1 wherein the electronic component is electrically connected to atleast some of the first contacts of the bottom substrate by solderballs.
 3. The semiconductor package of claim 1 wherein: each of thesecond contacts of the top substrate has a solder ball disposed thereon;and each of the solder balls of the top substrate is mechanically andelectrically connected to a respective one of the solder balls of thebottom substrate in a respective one of the vias.
 4. The semiconductorpackage of claim 1 wherein each of the vias is sized and configured toaccommodate the advancement of the solder balls on the top substratetherein to a depth wherein the top substrate contacts the package body.5. The semiconductor package of claim 1 wherein the electronic componentcomprises at least one semiconductor die which is electrically connectedto at least some of the first contacts of the bottom substrate by solderballs which are covered by a layer of underfill material disposedbetween the package body and the bottom substrate.
 6. The semiconductorpackage of claim 1 wherein: each of the second contacts of the topsubstrate has a solder ball disposed thereon; each of the first contactsof the bottom substrate has a solder ball disposed thereon; each of thevias extends to a respective one of the solder balls disposed on thefirst contacts of the bottom substrate; and each of the solder balls ofthe top substrate is mechanically and electrically connected to arespective one of the solder balls of the bottom substrate in arespective one of the vias.
 7. The semiconductor package of claim 1wherein each of the vias has a generally frusto-conical configuration.8. A semiconductor package comprising: a bottom substrate including: aplurality of first contacts, at least some of the first contacts of thebottom substrate each having a non-spherical conductive post disposedthereon; and a plurality of second contacts, each of the second contactsof the bottom substrate being electrically connected to at least one ofthe first contacts thereof; at least one electronic component attachedto the bottom substrate and electrically connected to at least one ofthe first contacts; a package body at least partially encapsulating thebottom substrate and the electronic component, the package bodyincluding a plurality of vias disposed therein and extending torespective ones of the conductive posts of the bottom substrate; and atop semiconductor package including a plurality of contacts which eachhave a solder ball disposed thereon, each of the solder balls of the topsemiconductor package being mechanically and electrically connected tothe conductive post in a respective one of the vias which are sized andconfigured to accommodate the advancement of the solder balls on the topsemiconductor package therein to a depth wherein the top semiconductorpackage contacts the package body.
 9. The semiconductor package of claim8 wherein the top semiconductor package comprises a ball grid arraydevice.
 10. The semiconductor package of claim 8 wherein the electroniccomponent comprises at least one semiconductor die which is electricallyconnected to at least some of the top contacts of the bottom substrateby solder balls.
 11. The semiconductor package of claim 8 wherein eachof the conductive posts has a substantially cylindrical configurationand is of a height which exceeds a diameter thereof.
 12. A semiconductorpackage comprising: a substrate including a plurality of first contactsand a plurality of second contacts disposed thereon, each of the secondcontacts being electrically connected to at least one of the firstcontacts, and each of the first contacts having a solder ball disposedthereon; at least one electronic component attached to the substrate andelectrically connected to at least one of the first contacts; and apackage body at least partially encapsulating the substrate and theelectronic component, the package body including a plurality of viasdisposed therein and extending to respective ones of the solder balls,the vias being sized and configured to accommodate the advancement ofsolder balls on a second semiconductor package therein to a depthwherein the second semiconductor package will contact the package bodywhen the solder balls on the second semiconductor package aremechanically and electrically connected to respective ones of the solderballs of the semiconductor package within respective ones of the vias.13. A semiconductor package comprising: a bottom substrate including aplurality of contacts, at least some of the contacts having solder ballsdisposed thereon which are each of a first maximum diameter; and atleast one electronic component attached to the bottom substrate andelectrically connected to at least one the contacts thereof; a packagebody at least partially encapsulating the bottom substrate and theelectronic component, the package body including a plurality of viasdisposed in therein and extending to respective ones of the solder ballsof the bottom substrate; and a top substrate including a plurality ofcontacts, at least some of the contacts of the top substrate each havinga solder ball which is of a second maximum diameter substantially equalto the first maximum diameter disposed thereon, the solder balls of thetop substrate being mechanically and electrically connected torespective ones of the solder balls of the bottom substrate, with thevias being sized and configured to accommodate the advancement of thesolder balls on the top substrate therein to a depth wherein the topsubstrate is disposed in extremely close proximity to the package body.14. The semiconductor package of claim 13 wherein the electroniccomponent comprises at least one semiconductor die which is electricallyconnected to at least some of the contacts of the bottom substrate bysolder balls which are covered by a layer of underfill material disposedbetween the package body and the bottom substrate.
 15. The semiconductorpackage of claim 13 wherein: each of the contacts of the top substratehave solder balls disposed thereon; and each of the solder balls of thetop substrate is mechanically and electrically connected to a respectiveone of the solder balls of the bottom substrate in a respective one ofthe vias.
 16. The semiconductor package of claim 13 wherein: each of thevias is sized and configured to accommodate the advancement of thesolder balls on the top substrate therein to a depth wherein the topsubstrate contacts the package body.
 17. The semiconductor package ofclaim 13 wherein each of the vias has a generally frusto-conicalconfiguration.
 18. A semiconductor package comprising: a substrateincluding a plurality of contacts, at least some of the contacts havingsolder balls which are each of a first maximum diameter disposedthereon; and at least one electronic component attached to the bottomsubstrate and electrically connected to at least one of the contactsthereof; a package body at least partially encapsulating the bottomsubstrate and the electronic component, the package body including aplurality of vias disposed therein and extending to respective ones ofthe solder balls of the bottom substrate; and a semiconductor packageincluding a plurality of contacts, at least some of which each have asolder ball of second maximum diameter substantially equal to the firstmaximum diameter disposed thereon, the solder balls of the semiconductorpackage being mechanically and electrically connected to respective onesof the solder balls of the bottom substrate, with the vias being sizedand configured to accommodate the advancement of the solder balls on thesemiconductor package therein to a depth wherein the semiconductorpackage is disposed in extremely close proximity to the package body.19. The semiconductor package of claim 18 wherein: each of the vias issized and configured to accommodate the advancement of the solder ballson the semiconductor package therein to a depth wherein thesemiconductor package contacts the package body.
 20. The semiconductorpackage of claim 18 wherein the electronic component comprises at leastone semiconductor die which is electrically connected to at least someof the contacts of the bottom substrate by solder balls.